2N5771

2N5771

2N5771

Hersteller: ON Semiconductor
Trans GP BJT PNP 15V 0.2A 3-Pin TO-92 Bulk
2n5771.pdf
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Technische Details 2N5771

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 15 V, Current - Collector (Ic) (Max): 200 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.

Preis 2N5771 ab 0 EUR bis 0 EUR

2N5771
2N5771
Hersteller: ON Semiconductor
Description: TRANS PNP 15V 0.2A TO-92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
2N5771,%20MMBT5771.pdf
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2N5771
2N5771
Hersteller: NTE Electronics, Inc
Description: T-PNP SI- RF/IF AMP
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP
Part Status: Active
Packaging: Bag
2N5771.pdf
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2N5771
2N5771
Hersteller: Rochester Electronics, LLC
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
NATLS15329-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
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