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2N5830

2N5830 Fairchild Semiconductor

FAIRS01267-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
auf Bestellung 43741 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6662+0.12 EUR
Mindestbestellmenge: 6662
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Technische Details 2N5830 Fairchild Semiconductor

Description: TRANS NPN 100V 0.2A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 625 mW.

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2N5830 Hersteller : ONSEMI FAIRS01267-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2N5830 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 43741 Stücke:
Lieferzeit 14-21 Tag (e)
2N5830 2N5830 Hersteller : ON Semiconductor 10756249565296612n5830.pdf Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk
Produkt ist nicht verfügbar
2N5830 2N5830 Hersteller : onsemi 2N5830.pdf Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5830 2N5830 Hersteller : onsemi / Fairchild 2N5830-1299973.pdf Bipolar Transistors - BJT NPN Transistor General Purpose
Produkt ist nicht verfügbar