Technische Details 2N6233 MOTOROLA
Description: TRANS NPN 225V 5A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V, Supplier Device Package: TO-66, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 225 V, Power - Max: 50 W.
Weitere Produktangebote 2N6233
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2N6233 | Hersteller : Microchip Technology |
 Trans GP BJT NPN 225V 10A 3-Pin(2+Tab) TO-66 |
Produkt ist nicht verfügbar |
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2N6233 | Hersteller : General Semiconductor |
Description: TRANS NPN 225V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V Supplier Device Package: TO-66 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 225 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
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| 2N6233 | Hersteller : Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
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| 2N6233 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |