2N7000RLRMG
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details 2N7000RLRMG
Description: MOSFET N-CH 60V 200MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote 2N7000RLRMG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2N7000RLRMG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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2N7000RLRMG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |