2N7002KQ-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1160+ | 0.062 EUR |
| 1280+ | 0.056 EUR |
| 1660+ | 0.043 EUR |
| 1760+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002KQ-13 DIODES INCORPORATED
Description: 2N7002 FAMILY SOT23 T&R 10K, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2N7002KQ-13 nach Preis ab 0.041 EUR bis 0.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2N7002KQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Power dissipation: 0.37W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 20 Stücke |
auf Bestellung 2820 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
2N7002KQ-13 | Hersteller : Diodes Incorporated |
Description: 2N7002 FAMILY SOT23 T&R 10K Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 9825 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
| 2N7002KQ-13 | Hersteller : Diodes Incorporated |
MOSFET 2N7002 Family SOT23 T&R 10K |
auf Bestellung 8296 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
 |
2N7002KQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.38A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
2N7002KQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
2N7002KQ-13 | Hersteller : Diodes Incorporated |
Description: 2N7002 FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |