2N7236U Microchip Technology


lds-0061-1.pdf Hersteller: Microchip Technology
Trans MOSFET P-CH 100V 18A 3-Pin TO-267AB
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Technische Details 2N7236U Microchip Technology

Description: MOSFET P-CH 100V 18A TO267AB, Packaging: Bulk, Package / Case: TO-267AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V, Power Dissipation (Max): 4W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-267AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V.

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2N7236U Hersteller : Microsemi Corporation 125222-lds-0061-1-datasheet Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Produkt ist nicht verfügbar