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2SB1091

2SB1091 Renesas Electronics Corporation

RNCCS08224-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
auf Bestellung 2143 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
222+3.24 EUR
Mindestbestellmenge: 222
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Technische Details 2SB1091 Renesas Electronics Corporation

Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 3V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 40 W.

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2SB1091 RNCCS08224-1.pdf?t.download=true&u=5oefqw
auf Bestellung 5462 Stücke:
Lieferzeit 21-28 Tag (e)