2SB1182TLQ Rohm Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 198+ | 0.8 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.6 EUR |
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Technische Details 2SB1182TLQ Rohm Semiconductor
Description: TRANS PNP 32V 2A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: CPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 10 W.
Weitere Produktangebote 2SB1182TLQ nach Preis ab 0.74 EUR bis 2.5 EUR
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2SB1182TLQ | Hersteller : Rohm Semiconductor |
 Trans GP BJT PNP 32V 2A 10000mW 3-Pin(2+Tab) CPT T/R |
auf Bestellung 457 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1182TLQ | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 32V 2A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 10 W |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1182TLQ | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 32V 2A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 10 W |
auf Bestellung 6090 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SB1182 TL Q | Hersteller : ROHM | SOT252/2.5 |
auf Bestellung 1396 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SB1182 TLQ | Hersteller : ROHM | TO252 |
auf Bestellung 743 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SB1182TLQ | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT D-PAK;BCE PNP;DRIVER SMT HFE RANK Q |
Produkt ist nicht verfügbar |