2SB1260T100R Rohm Semiconductor
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
400+ | 0.39 EUR |
402+ | 0.38 EUR |
500+ | 0.3 EUR |
1000+ | 0.27 EUR |
2000+ | 0.26 EUR |
4000+ | 0.23 EUR |
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Technische Details 2SB1260T100R Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote 2SB1260T100R nach Preis ab 0.41 EUR bis 1.31 EUR
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2SB1260T100R | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 80V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 100MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1260T100R | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 80V 1A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 100MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 2944 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1260T100R | Hersteller : ROHM Semiconductor | Bipolar Transistors - BJT PNP 80V 1A |
auf Bestellung 187 Stücke: Lieferzeit 14-28 Tag (e) |
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2SB1260 T100R | Hersteller : ROHM | SOT89 |
auf Bestellung 236 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1260T100R | Hersteller : ROHM | SOT-89 |
auf Bestellung 8150 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1260T100R | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 500mW; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2SB1260T100R | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 500mW; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |