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2SB1412TLR

2SB1412TLR Rohm Semiconductor

622sb1412.pdf Hersteller: Rohm Semiconductor
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(2+Tab) CPT T/R
auf Bestellung 5460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.5 EUR
317+ 0.48 EUR
500+ 0.43 EUR
1000+ 0.4 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 315
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Technische Details 2SB1412TLR Rohm Semiconductor

Description: TRANS PNP 20V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: CPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1 W.

Weitere Produktangebote 2SB1412TLR nach Preis ab 1.07 EUR bis 2.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SB1412TLR 2SB1412TLR Hersteller : Rohm Semiconductor 2SB1386,1412,1326.pdf Description: TRANS PNP 20V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 1887 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
14+ 2 EUR
100+ 1.55 EUR
500+ 1.32 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 11
2SB1412TLR 2SB1412TLR Hersteller : Rohm Semiconductor 2SB1386,1412,1326.pdf Description: TRANS PNP 20V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SB1412TLR 2SB1412TLR Hersteller : ROHM Semiconductor rohm_2sb1412-1201673.pdf Bipolar Transistors - BJT PNP 20V 5A
Produkt ist nicht verfügbar