2SD1163A-E

2SD1163A-E Renesas Electronics Corporation


RNCCS03060-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 5V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 40 W
auf Bestellung 2133 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
239+3.03 EUR
Mindestbestellmenge: 239
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Technische Details 2SD1163A-E Renesas Electronics Corporation

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A, Current - Collector Cutoff (Max): 5mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 5V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 40 W.