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2SD1207S-AE

2SD1207S-AE onsemi


2SD1207.pdf Hersteller: onsemi
Description: TRANS NPN 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 106834 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1567+0.46 EUR
Mindestbestellmenge: 1567
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Technische Details 2SD1207S-AE onsemi

Description: TRANS NPN 50V 2A 3MP, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.

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2SD1207S-AE Hersteller : ONSEMI ONSMS37549-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SD1207S-AE - 2SD1207 - BIPOLAR TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
2SD1207S-AE Hersteller : ON Semiconductor 1564en930-d.pdf Trans GP BJT NPN 50V 2A 1000mW Automotive 3-Pin Case MP T/R
Produkt ist nicht verfügbar
2SD1207S-AE 2SD1207S-AE Hersteller : onsemi 2SD1207.pdf Description: TRANS NPN 50V 2A 3MP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SD1207S-AE Hersteller : onsemi EN930_D-245502.pdf Bipolar Transistors - BJT BIP NPN 2A 50V
Produkt ist nicht verfügbar