2SD1230 onsemi
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.5 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.5 W
auf Bestellung 323 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
323+ | 2.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SD1230 onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V, Frequency - Transition: 20MHz, Supplier Device Package: TO-3PB, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2.5 W.
Weitere Produktangebote 2SD1230
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2SD1230 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |