Technische Details 2SJ197-T1-AZ NEC
Description: 2SJ197-T1-AZ - P-CHANNEL MOS FET, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-89, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V.
Weitere Produktangebote 2SJ197-T1-AZ
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2SJ197-T1-AZ | Hersteller : Renesas |
 Trans MOSFET P-CH 60V 1.5A 4-Pin(3+Tab) SC-62 T/R |
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| 2SJ197-T1-AZ | Hersteller : Renesas |
Description: 2SJ197-T1-AZ - P-CHANNEL MOS FET Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-89 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
Produkt ist nicht verfügbar |