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2SJ606-ZK-E1-AY

2SJ606-ZK-E1-AY NEC Corporation


RNCCS04310-1.pdf?t.download=true&u=5oefqw Hersteller: NEC Corporation
Description: P-CHANNEL SWITCHING POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
auf Bestellung 800 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
98+7.37 EUR
Mindestbestellmenge: 98
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Technische Details 2SJ606-ZK-E1-AY NEC Corporation

Description: P-CHANNEL SWITCHING POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 83A, Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V, Power Dissipation (Max): 120W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V.