2ED020I06-FI Infineon Technologies
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.88 EUR |
| 10+ | 4.38 EUR |
| 100+ | 3.59 EUR |
| 250+ | 3.41 EUR |
| 500+ | 3.06 EUR |
| 1000+ | 2.55 EUR |
| 2000+ | 2.45 EUR |
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Technische Details 2ED020I06-FI Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER, Packaging: Bulk, Package / Case: 18-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 14V ~ 18V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-18-2, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Independent, Driven Configuration: High-Side and Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 1A, 2A, Part Status: Active, DigiKey Programmable: Not Verified.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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2ED020I06FI | Hersteller : Infineon Technologies |
 Description: HALF-BRIDGE PERIPHERAL DRIVERPackaging: Bulk Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 14V ~ 18V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-18-2 Rise / Fall Time (Typ): 20ns, 20ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1A, 2A Part Status: Active DigiKey Programmable: Not Verified |
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