Produkte > ONSEMI > 2N6427_D26Z
2N6427_D26Z

2N6427_D26Z onsemi

2N6427%2C%20MMBT6427.pdf
Hersteller: onsemi
Description: TRANS NPN DARL 40V 1.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.2 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N6427_D26Z onsemi

Description: TRANS NPN DARL 40V 1.2A TO-92-3, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 1.2 A, Part Status: Obsolete, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).