2N7002ET3G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 260MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details 2N7002ET3G onsemi
Description: MOSFET N-CH 60V 260MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 300mW (Tj), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).