Technische Details 2N7002LT1H ON Semiconductor
Description: MOSFET N-CH 60V 115MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115mA (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 225mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002LT1H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2N7002LT1H | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002LT1H | Hersteller : onsemi |
Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |