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2SA1404E

2SA1404E Sanyo

SNYOS07619-1.pdf?t.download=true&u=5oefqw Hersteller: Sanyo
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
398+1.22 EUR
Mindestbestellmenge: 398
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Technische Details 2SA1404E Sanyo

Description: PNP EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 500MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1.2 W.