2SC3650-TD-E-ON onsemi
Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89/PCP-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 150 mW
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-89/PCP-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 150 mW
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1211+ | 0.61 EUR |
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Technische Details 2SC3650-TD-E-ON onsemi
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-89/PCP-1, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 150 mW.