Produkte > ONSEMI > 2SC3650-TD-E-ON

2SC3650-TD-E-ON onsemi

Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-89/PCP-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk

auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
1211+	0.41 EUR

Mindestbestellmenge: 1211

Im Einkaufswagen Stück im Wert von UAH

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Technische Details 2SC3650-TD-E-ON onsemi

Description: NPN EPITAXIAL PLANAR SILICON, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-89/PCP-1, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Bulk.