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2SC3953E-PM-ON onsemi

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Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-126ML
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.3 W

auf Bestellung 14825 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
1025+	0.7 EUR

Mindestbestellmenge: 1025

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Technische Details 2SC3953E-PM-ON onsemi

Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 400MHz, Supplier Device Package: TO-126ML, Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1.3 W.