2SD2096T114E Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS NPN 60V 3A HRT
Packaging: Cut Tape (CT)
Package / Case: HRT
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: HRT
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
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Technische Details 2SD2096T114E Rohm Semiconductor
Description: TRANS NPN 60V 3A HRT, Packaging: Tape & Reel (TR), Package / Case: HRT, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V, Frequency - Transition: 8MHz, Supplier Device Package: HRT, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Weitere Produktangebote 2SD2096T114E
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2SD2096T114E | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 60V 3A HRT Packaging: Tape & Reel (TR) Package / Case: HRT Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 8MHz Supplier Device Package: HRT Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
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