| Anzahl | Privatkunde |
|---|---|
| 198+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.75 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
198 Stücke
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Technische Details 2SJ168(TE85L,F) Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: SC59, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -200mA, Power dissipation: 0.2W, On-state resistance: 2Ω, Gate-source voltage: ±20V, Kind of channel: enhancement.
Weitere Produktangebote 2SJ168(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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2SJ168(TE85L,F) | TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59 Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC59 Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -200mA Power dissipation: 0.2W On-state resistance: 2Ω Gate-source voltage: ±20V Kind of channel: enhancement |
auf Bestellung 824 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SJ168(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC59
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 0.2W
On-state resistance: 2Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC59
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 0.2W
On-state resistance: 2Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)