2SJ665-DL-E onsemi
Hersteller: onsemi
Description: MOSFET P-CH 100V 27A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Description: MOSFET P-CH 100V 27A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
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Technische Details 2SJ665-DL-E onsemi
Description: MOSFET P-CH 100V 27A SMP-FD, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V, Power Dissipation (Max): 1.65W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: SMP-FD, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V.