2SK1338-E Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: NCH POWER MOSFET 900V 2A 7000MOH
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Description: NCH POWER MOSFET 900V 2A 7000MOH
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
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Technische Details 2SK1338-E Renesas Electronics Corporation
Description: NCH POWER MOSFET 900V 2A 7000MOH, Packaging: Tray, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A, Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V.