2SK3475(TE12L,F) TOSHIBA
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Case: SOT89
Kind of package: reel; tape
Power dissipation: 3W
Frequency: 520MHz
Drain current: 1A
Type of transistor: N-MOSFET
Open-loop gain: 14.9dB
Output power: 630mW
Efficiency: 45%
Polarisation: unipolar
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: depleted
Gate-source voltage: ±10V
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Case: SOT89
Kind of package: reel; tape
Power dissipation: 3W
Frequency: 520MHz
Drain current: 1A
Type of transistor: N-MOSFET
Open-loop gain: 14.9dB
Output power: 630mW
Efficiency: 45%
Polarisation: unipolar
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: depleted
Gate-source voltage: ±10V
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.5 EUR |
32+ | 2.26 EUR |
33+ | 2.17 EUR |
35+ | 2.06 EUR |
100+ | 2.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK3475(TE12L,F) TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW, Case: SOT89, Kind of package: reel; tape, Power dissipation: 3W, Frequency: 520MHz, Drain current: 1A, Type of transistor: N-MOSFET, Open-loop gain: 14.9dB, Output power: 630mW, Efficiency: 45%, Polarisation: unipolar, Electrical mounting: SMT, Kind of transistor: RF, Kind of channel: depleted, Gate-source voltage: ±10V, Drain-source voltage: 20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 2SK3475(TE12L,F) nach Preis ab 2.06 EUR bis 2.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK3475(TE12L,F) | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW Case: SOT89 Kind of package: reel; tape Power dissipation: 3W Frequency: 520MHz Drain current: 1A Type of transistor: N-MOSFET Open-loop gain: 14.9dB Output power: 630mW Efficiency: 45% Polarisation: unipolar Electrical mounting: SMT Kind of transistor: RF Kind of channel: depleted Gate-source voltage: ±10V Drain-source voltage: 20V |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK3475(TE12L.F) | Hersteller : Toshiba | Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R |
Produkt ist nicht verfügbar |
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2SK3475(TE12L,F) | Hersteller : Toshiba | Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R |
Produkt ist nicht verfügbar |