Technische Details 2SK3475(TE12L.F) Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW, Case: SOT89, Kind of package: reel; tape, Kind of transistor: RF, Electrical mounting: SMT, Polarisation: unipolar, Output power: 630mW, Drain current: 1A, Power dissipation: 3W, Gate-source voltage: ±10V, Open-loop gain: 14.9dB, Drain-source voltage: 20V, Efficiency: 45%, Frequency: 520MHz, Kind of channel: depletion, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 2SK3475(TE12L.F)
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2SK3475(TE12L,F) | Hersteller : Toshiba |
 Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R |
Produkt ist nicht verfügbar |
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2SK3475(TE12L,F) | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW Case: SOT89 Kind of package: reel; tape Kind of transistor: RF Electrical mounting: SMT Polarisation: unipolar Output power: 630mW Drain current: 1A Power dissipation: 3W Gate-source voltage: ±10V Open-loop gain: 14.9dB Drain-source voltage: 20V Efficiency: 45% Frequency: 520MHz Kind of channel: depletion Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2SK3475(TE12L,F) | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW Case: SOT89 Kind of package: reel; tape Kind of transistor: RF Electrical mounting: SMT Polarisation: unipolar Output power: 630mW Drain current: 1A Power dissipation: 3W Gate-source voltage: ±10V Open-loop gain: 14.9dB Drain-source voltage: 20V Efficiency: 45% Frequency: 520MHz Kind of channel: depletion Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |