2SK3659-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 20V 65A TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 210+ | 2.23 EUR |
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Technische Details 2SK3659-AZ Renesas Electronics Corporation
Description: MOSFET N-CH 20V 65A TO220-3, Packaging: Bulk, Package / Case: TO-220-3 Isolated Tab, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V.