30KP160CA MDE Semiconductor Inc
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 46.38 EUR |
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Technische Details 30KP160CA MDE Semiconductor Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 30kW, Max. off-state voltage: 160V, Breakdown voltage: 178.7V, Max. forward impulse current: 120A, Semiconductor structure: bidirectional, Case: R6, Mounting: THT, Leakage current: 10µA, Kind of package: bulk, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 30KP160CA
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30KP160CA | Hersteller : CDIL |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 178.7V Max. forward impulse current: 120A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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30KP160CA | Hersteller : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 178.7V Max. forward impulse current: 120A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |