30KP168CA MDE Semiconductor Inc
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 46.38 EUR |
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Technische Details 30KP168CA MDE Semiconductor Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk, Case: R6, Type of diode: TVS, Semiconductor structure: bidirectional, Mounting: THT, Kind of package: bulk, Features of semiconductor devices: glass passivated, Max. forward impulse current: 111.2A, Peak pulse power dissipation: 30kW, Max. off-state voltage: 168V, Breakdown voltage: 187.7V, Leakage current: 10µA.
Weitere Produktangebote 30KP168CA
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30KP168CA | Hersteller : CDIL |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk Case: R6 Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated Max. forward impulse current: 111.2A Peak pulse power dissipation: 30kW Max. off-state voltage: 168V Breakdown voltage: 187.7V Leakage current: 10µA |
Produkt ist nicht verfügbar |
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30KP168CA | Hersteller : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk Case: R6 Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated Max. forward impulse current: 111.2A Peak pulse power dissipation: 30kW Max. off-state voltage: 168V Breakdown voltage: 187.7V Leakage current: 10µA |
Produkt ist nicht verfügbar |