30KP180CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE BP 180VRWM 290.4VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.3A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 290.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 48.1 EUR |
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Technische Details 30KP180CA MDE Semiconductor Inc
Description: TVS DIODE BP 180VRWM 290.4VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 104.3A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 201.1V, Voltage - Clamping (Max) @ Ipp: 290.4V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Weitere Produktangebote 30KP180CA
| Foto | Bezeichnung | Hersteller | Beschreibung |
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30KP180CA | Hersteller : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
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30KP180CA | Hersteller : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |