30KP288CA

30KP288CA MDE Semiconductor Inc


30KP_Series.pdf Hersteller: MDE Semiconductor Inc
Description: TVS DIODE BP 288VRWM 469.9VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 64.5A
Voltage - Reverse Standoff (Typ): 288V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 321.7V
Voltage - Clamping (Max) @ Ipp: 469.9V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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Lieferzeit 10-14 Tag (e)
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1+30.48 EUR
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Technische Details 30KP288CA MDE Semiconductor Inc

Description: TVS DIODE BP 288VRWM 469.9VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 64.5A, Voltage - Reverse Standoff (Typ): 288V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 321.7V, Voltage - Clamping (Max) @ Ipp: 469.9V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active.

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30KP288CA 30KP288CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
30KP288CA 30KP288CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
Produkt ist nicht verfügbar