30KP39CA

30KP39CA MDE Semiconductor Inc


30KP_Series.pdf Hersteller: MDE Semiconductor Inc
Description: TVS DIODE BP 39VRWM 67.2VC
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+45.32 EUR
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Technische Details 30KP39CA MDE Semiconductor Inc

Category: Bidirectional THT transil diodes, Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 30kW, Max. off-state voltage: 39V, Breakdown voltage: 43.6V, Max. forward impulse current: 450.9A, Semiconductor structure: bidirectional, Case: R6, Mounting: THT, Leakage current: 4mA, Kind of package: bulk, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote 30KP39CA

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30KP39CA 30KP39CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
30KP39CA 30KP39CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar