30KP42A MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE UP 42VRWM 72.0VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 420.8A
Voltage - Reverse Standoff (Typ): 42V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 46.9V
Voltage - Clamping (Max) @ Ipp: 72V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 44.41 EUR |
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Technische Details 30KP42A MDE Semiconductor Inc
Description: TVS DIODE UP 42VRWM 72.0VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 420.8A, Voltage - Reverse Standoff (Typ): 42V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 46.9V, Voltage - Clamping (Max) @ Ipp: 72V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Weitere Produktangebote 30KP42A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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30KP42A | Hersteller : CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 46.9V; 420.8A; unidirectional; R6; bulk Mounting: THT Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: R6 Max. off-state voltage: 42V Semiconductor structure: unidirectional Max. forward impulse current: 420.8A Breakdown voltage: 46.9V Leakage current: 1mA Anzahl je Verpackung: 1 Stücke |
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30KP42A | Hersteller : CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 46.9V; 420.8A; unidirectional; R6; bulk Mounting: THT Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: R6 Max. off-state voltage: 42V Semiconductor structure: unidirectional Max. forward impulse current: 420.8A Breakdown voltage: 46.9V Leakage current: 1mA |
Produkt ist nicht verfügbar |