30KP43CA

30KP43CA Solid State Inc.


30KPSeries-ssi.pdf Hersteller: Solid State Inc.
Description: 30KW TVS BIDIRECTIONAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 430A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 650 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+15.47 EUR
Mindestbestellmenge: 10
Produktrezensionen
Produktbewertung abgeben

Technische Details 30KP43CA Solid State Inc.

Description: 30KW TVS BIDIRECTIONAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 430A, Voltage - Reverse Standoff (Typ): 43V, Supplier Device Package: Axial, Bidirectional Channels: 1, Voltage - Breakdown (Min): 47.8V, Voltage - Clamping (Max) @ Ipp: 71V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active.

Weitere Produktangebote 30KP43CA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
30KP43CA 30KP43CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 48V; 415.1A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 43V
Breakdown voltage: 48V
Max. forward impulse current: 415.1A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 1mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
30KP43CA 30KP43CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 48V; 415.1A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 43V
Breakdown voltage: 48V
Max. forward impulse current: 415.1A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 1mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar