30KPA132CA-B Littelfuse
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 23.01 EUR |
| 10+ | 21.2 EUR |
| 50+ | 19.73 EUR |
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Technische Details 30KPA132CA-B Littelfuse
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Max. off-state voltage: 132V, Breakdown voltage: 154.8V, Max. forward impulse current: 142.3A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Peak pulse power dissipation: 30kW, Kind of package: bulk, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 30KPA132CA-B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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30KPA132CA-B | Hersteller : Littelfuse Inc. |
 Description: TVS DIODE 132VWM 213VC P600 |
auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
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30KPA132CA-B | Hersteller : Littelfuse |
TVS Diode Single Bi-Dir 132V 30KW 2-Pin Case P-600 Bulk |
Produkt ist nicht verfügbar |
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30KPA132CA-B | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| 30KPA132CA-B | Hersteller : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
Produkt ist nicht verfügbar |
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30KPA132CA-B | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 154.8V; 142.3A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 132V Breakdown voltage: 154.8V Max. forward impulse current: 142.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |