30KPA39CA-B LITTELFUSE
Hersteller: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 45.8V; 450.9A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 45.8V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 45.8V; 450.9A; bidirectional; ±5%; P600; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 45.8V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details 30KPA39CA-B LITTELFUSE
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 45.8V; 450.9A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 30kW, Max. off-state voltage: 39V, Breakdown voltage: 45.8V, Max. forward impulse current: 450.9A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 4mA, Kind of package: bulk, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 30KPA39CA-B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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30KPA39CA-B | Hersteller : Littelfuse Inc. | Description: TVS DIODE 39VWM 67.2VC P600 BULK |
Produkt ist nicht verfügbar |
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30KPA39CA-B | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 45.8V; 450.9A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 39V Breakdown voltage: 45.8V Max. forward impulse current: 450.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 4mA Kind of package: bulk Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |