3LN01C-TB-E

3LN01C-TB-E

Hersteller: ON Semiconductor
Description: MOSFET N-CH 30V 150MA 3CP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

3LN01C-D.PDF
verfügbar/auf Bestellung
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)

3000+ 0.24 EUR

Technische Details 3LN01C-TB-E

Description: MOSFET N-CH 30V 150MA 3CP, FET Type: MOSFET N-Channel, Metal Oxide, FET Feature: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V, Power - Max: 250mW, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: 3-CP.

Preis 3LN01C-TB-E ab 0.22 EUR bis 1.12 EUR

3LN01C-TB-E
3LN01C-TB-E
Hersteller: ON Semiconductor
MOSFET NCH 1.5V DRIVE SERIES
3LN01C-D-105621.pdf
auf Bestellung 11647 Stücke
Lieferzeit 14-28 Tag (e)
50+ 1.06 EUR
71+ 0.73 EUR
154+ 0.34 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
3LN01C-TB-E
Hersteller: ON Semiconductor
Description: MOSFET N-CH 30V 150MA 3CP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
3LN01C-D.PDF
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
21+ 1.12 EUR
3LN01C-TB-E
Hersteller: SANYO
SOT23
3LN01C-D.PDF
9000 Stücke
3LN01C-TB-E
Hersteller: ON Semiconductor
Description: MOSFET N-CH 30V 150MA 3CP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
3LN01C-D.PDF
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)