Suchergebnisse für "559294" : 4
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Mindestbestellmenge: 2
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Mindestbestellmenge: 3
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IPDQ60R040S7XTMA1 | Infineon Technologies |
 Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R040S7XTMA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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SI8640EC-B-IS1 | Skyworks Solutions Inc. |
Description: DGTL ISOLTR 3.75KV 4CH GP 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Data Rate: 150Mbps Technology: Capacitive Coupling Voltage - Isolation: 3750Vrms Inputs - Side 1/Side 2: 4/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 2.5ns, 2.5ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 13ns, 13ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 4.5ns Part Status: Active Number of Channels: 4 |
auf Bestellung 2579 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R040S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPDQ60R040S7XTMA1 |
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Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.14 EUR |
| 10+ | 7.81 EUR |
| 25+ | 7.22 EUR |
| 100+ | 6.58 EUR |
| 250+ | 6.28 EUR |
| IPDQ60R040S7XTMA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 9.22 EUR |
| 10+ | 6.69 EUR |
| 100+ | 5.84 EUR |
| 500+ | 5.63 EUR |
| 750+ | 5.58 EUR |
| SI8640EC-B-IS1 |
|
Hersteller: Skyworks Solutions Inc.
Description: DGTL ISOLTR 3.75KV 4CH GP 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 150Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.5ns, 2.5ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 13ns, 13ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4.5ns
Part Status: Active
Number of Channels: 4
Description: DGTL ISOLTR 3.75KV 4CH GP 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 150Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.5ns, 2.5ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 13ns, 13ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4.5ns
Part Status: Active
Number of Channels: 4
auf Bestellung 2579 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 10+ | 4.5 EUR |
| 48+ | 3.92 EUR |
| 144+ | 3.65 EUR |
| 288+ | 3.52 EUR |
| 528+ | 3.42 EUR |
| 1008+ | 3.33 EUR |
| 2544+ | 3.23 EUR |
| IPDQ60R040S7XTMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH