5KP16CA/B YAGEO
Hersteller: YAGEODescription: 5KP, P600, 16V, 26V, BOX
Packaging: Box
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 196.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 275 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.55 EUR |
| 10+ | 3.78 EUR |
| 100+ | 3.01 EUR |
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Technische Details 5KP16CA/B YAGEO
Description: 5KP, P600, 16V, 26V, BOX, Packaging: Box, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 196.2A, Voltage - Reverse Standoff (Typ): 16V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 17.8V, Voltage - Clamping (Max) @ Ipp: 26V, Power - Peak Pulse: 5000W (5kW), Power Line Protection: No, Part Status: Active.
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Verfügbarkeit |
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|---|---|---|---|---|---|
| 5KP16CA-B | Hersteller : Littelfuse Inc. | Description: TVS DIODE 16VWM 26VC P600 |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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Category: Bidirectional THT transil diodes Description: Diode: TVS; 18.8V; 196.2A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 16V Breakdown voltage: 18.8V Max. forward impulse current: 196.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
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5KP16CA-B | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18.8V; 196.2A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 16V Breakdown voltage: 18.8V Max. forward impulse current: 196.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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