Produkte > LITTELFUSE > 5KP190A-B
5KP190A-B

5KP190A-B LITTELFUSE


5KP-ser.pdf Hersteller: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 222V; 16.5A; unidirectional; ±5%; P600; bulk
Mounting: THT
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 5kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 190V
Semiconductor structure: unidirectional
Max. forward impulse current: 16.5A
Breakdown voltage: 222V
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details 5KP190A-B LITTELFUSE

Category: Unidirectional THT transil diodes, Description: Diode: TVS; 5kW; 222V; 16.5A; unidirectional; ±5%; P600; bulk, Mounting: THT, Kind of package: bulk, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 5kW, Case: P600, Tolerance: ±5%, Max. off-state voltage: 190V, Semiconductor structure: unidirectional, Max. forward impulse current: 16.5A, Breakdown voltage: 222V, Leakage current: 2µA, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote 5KP190A-B

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
5KP190A-B Hersteller : Littelfuse Inc. Description: TVS DIODE 190V 310V P600
Produkt ist nicht verfügbar
5KP190A-B 5KP190A-B Hersteller : Littelfuse Littelfuse_TVS_Diode_5KP_Datasheet_pdf-348856.pdf ESD Suppressors / TVS Diodes TVS Hi-Power Axial
Produkt ist nicht verfügbar
5KP190A/B 5KP190A/B Hersteller : Yageo 5KP_0-1604889.pdf ESD Suppressors / TVS Diodes 5KP, P600, 190V, 310V, BOX
Produkt ist nicht verfügbar
5KP190A-B 5KP190A-B Hersteller : LITTELFUSE 5KP-ser.pdf Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 222V; 16.5A; unidirectional; ±5%; P600; bulk
Mounting: THT
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 5kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 190V
Semiconductor structure: unidirectional
Max. forward impulse current: 16.5A
Breakdown voltage: 222V
Leakage current: 2µA
Produkt ist nicht verfügbar