5SNA 1000G650300 ABB
Hersteller: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Case: HIPAK
Max. off-state voltage: 6.5kV
Semiconductor structure: common emitter; common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge x3
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Case: HIPAK
Max. off-state voltage: 6.5kV
Semiconductor structure: common emitter; common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge x3
Anzahl je Verpackung: 1 Stücke
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Technische Details 5SNA 1000G650300 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Case: HIPAK, Max. off-state voltage: 6.5kV, Semiconductor structure: common emitter; common gate; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 1kA, Pulsed collector current: 2kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge x3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 5SNA 1000G650300
Foto | Bezeichnung | Hersteller | Beschreibung |
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5SNA 1000G650300 | Hersteller : ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Case: HIPAK Max. off-state voltage: 6.5kV Semiconductor structure: common emitter; common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 1kA Pulsed collector current: 2kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge x3 |
Produkt ist nicht verfügbar |