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5SNA 1200E330100 ABB


5SNA_1200E330100.pdf Hersteller: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Topology: IGBT half-bridge x3
Semiconductor structure: common emitter; common gate; transistor/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Max. off-state voltage: 3.3kV
Case: HIPAK
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Technische Details 5SNA 1200E330100 ABB

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Topology: IGBT half-bridge x3, Semiconductor structure: common emitter; common gate; transistor/transistor, Type of semiconductor module: IGBT, Mechanical mounting: screw, Electrical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 1.2kA, Pulsed collector current: 2.4kA, Max. off-state voltage: 3.3kV, Case: HIPAK.