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5SNA 1200E330100 ABB

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Hersteller: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 1 Stücke

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Technische Details 5SNA 1200E330100 ABB

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Type of semiconductor module: IGBT, Semiconductor structure: common emitter; common gate; transistor/transistor, Topology: IGBT half-bridge x3, Max. off-state voltage: 3.3kV, Collector current: 1.2kA, Case: HIPAK, Electrical mounting: screw, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 2.4kA, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote 5SNA 1200E330100

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	5SNA 1200E330100	Hersteller : ABB	Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of semiconductor module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 3.3kV Collector current: 1.2kA Case: HIPAK Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH