Technische Details 8EWS12S IR
Description: DIODE GEN PURP 1.2KV 8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D-PAK (TO-252AA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote 8EWS12S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 8EWS12S | Hersteller : IR |
 TO-252 |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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8EWS12S | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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8EWS12S | Hersteller : Vishay Semiconductors |
Rectifiers 1200 Volt 200 Amp |
Produkt ist nicht verfügbar |