APT1001RBVFRG Microchip Technology
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Technische Details APT1001RBVFRG Microchip Technology
Description: MOSFET N-CH 1000V 11A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V.
Weitere Produktangebote APT1001RBVFRG
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APT1001RBVFRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube |
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APT1001RBVFRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT1001RBVFRG | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1000V, TO-247, RoHS |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC |
Produkt ist nicht verfügbar |