APT1003RSFLLG Microchip Technology
auf Bestellung 46 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 28.94 EUR |
| 100+ | 25.04 EUR |
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Technische Details APT1003RSFLLG Microchip Technology
Description: MOSFET N-CH 1000V 4A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3 [S], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V.
Weitere Produktangebote APT1003RSFLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT1003RSFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Anzahl je Verpackung: 1 Stücke |
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APT1003RSFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 4A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3 [S] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V |
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APT1003RSFLLG | Hersteller : Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, D3, RoHS, TO-268 |
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APT1003RSFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC |
Produkt ist nicht verfügbar |