Technische Details APT10045B2LLG Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX, Case: TO247MAX, Mounting: THT, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 92A, Drain-source voltage: 1kV, Drain current: 23A, On-state resistance: 0.45Ω, Type of transistor: N-MOSFET, Power dissipation: 565W, Polarisation: unipolar, Gate charge: 154nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10045B2LLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT10045B2LLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1KV 23A 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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| APT10045B2LLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10045B2LLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC |
Produkt ist nicht verfügbar |