APT10086BVFRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details APT10086BVFRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 13A, Pulsed drain current: 52A, Power dissipation: 370W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 860mΩ, Mounting: THT, Gate charge: 275nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10086BVFRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APT10086BVFRG | Hersteller : Microchip / Microsemi | MOSFET FG, FREDFET, 1000V, TO-247, RoHS |
Produkt ist nicht verfügbar |
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APT10086BVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |