APT10090SLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details APT10090SLLG MICROCHIP (MICROSEMI)
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 12A, Pulsed drain current: 48A, Power dissipation: 298W, Case: D3PAK, Gate-source voltage: ±30V, On-state resistance: 0.95Ω, Mounting: SMD, Gate charge: 71nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10090SLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT10090SLLG | Hersteller : Microchip / Microsemi | MOSFET FG, MOSFET,1000V, 0.90_OHM, D3, TO-268, RoHS |
Produkt ist nicht verfügbar |
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APT10090SLLG | Hersteller : Microchip Technology |
 MOSFET FG, MOSFET,1000V, 0.90_OHM, D3, TO-268, RoHS |
Produkt ist nicht verfügbar |
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APT10090SLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |