APT106N60LC6 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 600V 106A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
auf Bestellung 63 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 49.79 EUR |
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Technische Details APT106N60LC6 Microchip Technology
Description: MOSFET N-CH 600V 106A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.4mA, Supplier Device Package: TO-264 (L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V.
Weitere Produktangebote APT106N60LC6 nach Preis ab 43.71 EUR bis 50.65 EUR
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APT106N60LC6 | Hersteller : Microchip Technology |
MOSFET MOSFET COOLMOS 600 V 106 A TO-264 |
auf Bestellung 33 Stücke: Lieferzeit 14-28 Tag (e) |
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APT106N60LC6 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO264 Anzahl je Verpackung: 1 Stücke |
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APT106N60LC6 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO264 Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO264 |
Produkt ist nicht verfügbar |